Device R&D Engineer

This position can be based in the West Lake District of Nanshan District, Shenzhen.

Duties:

1. Responsible for the development of silicon-based single-photon avalanche diode (e.g. SPAD, SiPM) device process, structure and characterization methods;

2. Responsible for device and pixel-level process, electrical, optical simulation and modeling work, quantifying performance indicators;

3. Participate in experiment design, and improve and iterate device design;

4. Research advanced characterization techniques for devices and promote the implementation of characterization schemes;

5. Keep up with the latest photonic and electronic device technologies, participate in project pre-research;

Requirements:

1. Master's degree or above, with 3 to 5 years or above of CMOS SPAD/SiPM device or CIS device pixel design experience (with complete design and fabrication experience preferred);

2. Proficient in semiconductor device simulation tools such as TCAD, FDTD, etc.;

3. Proficient in using Python or MATLAB programming language for data processing;

4. Familiar with semiconductor physics, solid-state physics, CMOS semiconductor process, optoelectronic devices, microelectronics, optics, materials and other related professional basic knowledge;

5. English proficiency of level four or above, listening, reading and writing are fluent without difficulty;

6. Able to use Word, Excel, PPT, etc., office and drawing software fluently;

7. Enjoy communication, good at team work, strong sense of responsibility and subjective initiative;